JPH0454977B2 - - Google Patents
Info
- Publication number
- JPH0454977B2 JPH0454977B2 JP57168902A JP16890282A JPH0454977B2 JP H0454977 B2 JPH0454977 B2 JP H0454977B2 JP 57168902 A JP57168902 A JP 57168902A JP 16890282 A JP16890282 A JP 16890282A JP H0454977 B2 JPH0454977 B2 JP H0454977B2
- Authority
- JP
- Japan
- Prior art keywords
- fuse
- circuit
- output terminal
- fuse circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Read Only Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57168902A JPS5958839A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57168902A JPS5958839A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5958839A JPS5958839A (ja) | 1984-04-04 |
JPH0454977B2 true JPH0454977B2 (en]) | 1992-09-01 |
Family
ID=15876675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57168902A Granted JPS5958839A (ja) | 1982-09-28 | 1982-09-28 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5958839A (en]) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5372472A (en) * | 1976-12-08 | 1978-06-27 | Nec Corp | Semiconductor device |
JPS5617059A (en) * | 1979-07-20 | 1981-02-18 | Fujitsu Ltd | Semiconductor switching element |
-
1982
- 1982-09-28 JP JP57168902A patent/JPS5958839A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5958839A (ja) | 1984-04-04 |
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